✦ LIBER ✦

Implantation and diffusion of carbon into niobium carbide single crystals

✍ Scribed by J. Geerk; K.-G. Langguth

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 394 KB
Volume: 23
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(77)90636-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Superconductivity of niobium nitride sin

Superconductivity of niobium nitride single crystals after implantation of carbon and nitrogen

✍ O. Meyer; E. Friedland; B. Scheerer 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 383 KB

Diffusion of nitrogen into silicon carbi

Diffusion of nitrogen into silicon carbide single crystals doped with aluminum

✍ L.J. Kroko; A.G. Milnes 📂 Article 📅 1966 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Catalytic effects of metal carbides, oxi

Catalytic effects of metal carbides, oxides and Ni single crystal on the vapor growth of micro-coiled carbon fibers

✍ S. Motojima; S. Asakura; T. Kasemura; S. Takeuchi; H. Iwanaga 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 584 KB

Micro-coiled carbon fibers were prepared by the impurity-activated chemical vapor deposition using the powders of metal carbides, metal oxides, and a Ni single crystal. The catalytic effect of these impurities on the coil yield and morphology were examined, and the growth mechanism is discussed. The

5348. Laser implantation of impurity ato

5348. Laser implantation of impurity atoms into silicon and galliumarsenide single crystals: S Damgaard et al, J Appl Phys, 52 (11), 1981, 6907–6916

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 150 KB

Ion implantation. II. Investigation of d

Ion implantation. II. Investigation of distribution of effective ranges of phosphorus ions implanted into single crystal silicon: A Golanski and R Dybczynski, Nukleonika, 18 (8), 1973, 351–360 (in Polish)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

1109. The degree of substitution of crys

1109. The degree of substitution of crystal lattice nodes by impurity atoms and disordering at boron implantation into silicon: V K Vasilev et al, Rep of 5th all-union conf of phys interact of charged part with single cryst, Moscow University 1974, 413–419 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 134 KB