1109. The degree of substitution of crystal lattice nodes by impurity atoms and disordering at boron implantation into silicon: V K Vasilev et al, Rep of 5th all-union conf of phys interact of charged part with single cryst, Moscow University 1974, 413–419 (in Russian)

• Publisher: Elsevier Science
• Year: 1975
• Tongue: English
• Weight: 134 KB
• Volume: 25
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(75)91688-7