✦ LIBER ✦

Impact of SAW device passivation on RF performance

✍ Scribed by Marks, B.W.; Sheddrick, D.W.; Shen Jen

Book ID: 118015235
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 350 KB
Volume: 48
Category: Article
ISSN: 0885-3010
DOI: 10.1109/58.949745

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of Graphene Interface Quality on

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

✍ Hsu, A.; Han Wang; Ki Kang Kim; Jing Kong; Palacios, T. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 335 KB

High performance RF integrated passive d

High performance RF integrated passive devices on thick oxide substrate using Cu-BCB process

✍ Inho Jeong; Ki-Joong Kim; Tong-Ook Kong; Jun-Seok Kim; Hyung-Kyu Choi; Choong-Mo 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 309 KB

## Abstract In this paper, we develop a low‐cost manufacturing technology for RF substrate and a high‐performance process technology for integrated passive devices by electrochemically forming thick oxide on Si wafer and processing Cu thick metal and BCB. Several integrated passive devices such as

Limits on the performance of RF-over-fib

Limits on the performance of RF-over-fiber links and their impact on device design

✍ Cox, C.H.; Ackerman, E.I.; Betts, G.E.; Prince, J.L. 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 471 KB

Comparison of RF integrated passive devi

Comparison of RF integrated passive devices on smart silicon and glass substrate

✍ Inho Jeong; J. Y. Kim; B. J. Lee; J. J. Choi; Y. S. Kwon 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 768 KB

The impact of postbreakdown gate leakage

The impact of postbreakdown gate leakage on MOSFET RF performances

✍ L. Pantisano; K. Cheung 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 49 KB

Impact of lateral source/drain abruptnes

Impact of lateral source/drain abruptness on device performance

✍ Kwong, M.Y.; Kasnavi, R.; Griffin, P.; Plummer, J.D.; Dutton, R.W. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 637 KB