Defects created by the decay of radioactive sodium, potassium and magnesium isotopes in n-type Si are studied by capacitance spectroscopy. In particular, we were interested in the creation of defects due to the large recoil energies involved in the radioactive decay. No evidence was found for an enh
Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer
✍ Scribed by Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi
- Book ID
- 124049903
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2012
- Tongue
- English
- Weight
- 420 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0021-4922
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract We review recent results relating to the boron–oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron–oxygen defect, which involves substitutional boron. In addition, the proposed prese
Pt. [alpha]. Group Iv Elements. Edited By M. Schulz ; Authors, C.a.j. Ammerlaan ... [et Al.]. Supplement To Vols. Iii/17, 22 (print Version), Revised And Updated Edition Of Vols. Iii/17, 22 (cd-rom). Includes Bibliographical References.
Pt. [alpha]. Group Iv Elements. Edited By M. Schulz ; Authors, C.a.j. Ammerlaan ... [et Al.]. Supplement To Vols. Iii/17, 22 (print Version), Revised And Updated Edition Of Vols. Iii/17, 22 (cd-rom). Includes Bibliographical References.