Defect generation by radioactive decay of light elements in n-type silicon

✍ Scribed by J. Bollmann; M. Thieme; J. Weber; ISOLDE-Collaboration

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 192 KB
• Volume: 376-377
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.026

✦ Synopsis

Defects created by the decay of radioactive sodium, potassium and magnesium isotopes in n-type Si are studied by capacitance spectroscopy. In particular, we were interested in the creation of defects due to the large recoil energies involved in the radioactive decay. No evidence was found for an enhanced defect generation with concentrations exceeding those of the implanted mother isotopes. In our samples only defects are formed which contain mother or daughter isotopes and vacancies. The decay of 24 Na isotopes results in two Mgrelated defect levels. After implantation of radioactive 42 K we observe one K-related acceptor at E c À 0:269 eV. The decay to the stable isotope 42 Ca generates the A-center in concentrations comparable to the K-related center. In the decay series of 28 Mg via 28 Al to 28 Si a new level was detected which is thermally unstable at room temperature and converts to the A-center.