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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

✍ Scribed by Yurchuk, Ekaterina; Müller, Johannes; Knebel, Steve; Sundqvist, Jonas; Graham, Andrew P.; Melde, Thomas; Schröder, Uwe; Mikolajick, Thomas

Book ID
122889932
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
691 KB
Volume
533
Category
Article
ISSN
0040-6090

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Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent