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Impact of distributed gate resistance on the performance of MOS devices

โœ Scribed by Razavi, B.; Ran-Hong Yan; Lee, K.F.


Book ID
115462683
Publisher
IEEE
Year
1994
Tongue
English
Weight
447 KB
Volume
41
Category
Article
ISSN
1057-7122

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Impact of Ge content on the gate oxide r
โœ Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen; ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 307 KB

In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol