✦ LIBER ✦
Impact of 0.25 μm dual gate oxide thickness CMOS process on flicker noise performance of multifingered deep-submicron MOS devices
✍ Scribed by Chew, K.W.; Yeo, K.S.; Chu, S.-F.; Wang, Y.M.
- Book ID
- 114447839
- Publisher
- The Institution of Electrical Engineers
- Year
- 2001
- Tongue
- English
- Weight
- 615 KB
- Volume
- 148
- Category
- Article
- ISSN
- 1350-2409
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