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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

✍ Scribed by Ng, C.Y.; Chen, T.P.; Ding, L.; Yang, M.; Wong, J.I.; Zhao, P.; Yang, X.H.; Liu, K.Y.; Tse, M.S.; Trigg, A.D.; Fung, S.

Book ID: 114618185
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 313 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.870872

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