✦ LIBER ✦

On the gate-controlled surface capacitance of MOS structures of Si having n-channel inversion layers

✍ Scribed by D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the gate capacitance of mos structure

✍ K. P. Ghatak; N. Chattopadhyay; M. Mondal 📂 Article 📅 1989 🏛 Springer 🌐 English ⚖ 561 KB

Influence of surface electric field on t

✍ Choudhury, D. R. ;Chowdhury, A. K. ;Chakravarti, A. N. 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 272 KB

Effect of crossed electric and magnetic

✍ K. P. Ghatak; S. Bhattacharyya; S. N. Biswas 📂 Article 📅 1991 🏛 Springer-Verlag 🌐 English ⚖ 328 KB

Theoretical analysis of the oscillatory

✍ M. Mondal; N. Chattopadhyay; K. P. Ghatak 📂 Article 📅 1988 🏛 Springer 🌐 English ⚖ 672 KB

The Influence of Defect Surface Layers o

✍ Litovskii, R. N. ;Lysenko, V. S. ;Nazarov, A. N. ;Rudenko, T. E. ;Kaschieva, S. 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 519 KB

Influence of inversion channel quantizat

✍ Paasch, G. ;Scheinert, S. ;Tarnay, K. 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB