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Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

✍ Scribed by Armstrong, A.; Arehart, A. R.; Moran, B.; DenBaars, S. P.; Mishra, U. K.; Speck, J. S.; Ringel, S. A.

Book ID: 127091943
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 263 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1643540

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