Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs
β Scribed by Sung Hwan Kim; Jacobson, Z.A.; Tsu-Jae King Liu
- Book ID
- 114620025
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 407 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
In this paper experimental results on the effect of the Ge doping on the distribution of dislocations in directional solidified multi-crystalline (mc) Si are presented. The dislocation density distribution is analyzed on the basis of the average dislocation density and the cumulative probability by
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