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The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon

✍ Scribed by M.P. Bellmann; T. Kaden; D. Kressner-Kiel; J. Friedl; H.J. Möller; L. Arnberg

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 668 KB
Volume: 325
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.04.038

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✦ Synopsis

In this paper experimental results on the effect of the Ge doping on the distribution of dislocations in directional solidified multi-crystalline (mc) Si are presented. The dislocation density distribution is analyzed on the basis of the average dislocation density and the cumulative probability by means of etch pits counting via optical auto-focus (AF) microscope and the Photovoltaic (PV) scan method. The Ge doped ingots show a significantly lower average dislocation density and dislocations are more homogeneously distributed in the Si matrix, whereas the undoped ingot contains large areas of accumulated dislocations. Apparently, the overall dislocation density is reduced by the induced strain field and the lower mobility of dislocations due to the pinning effect.

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