III-V nitrides for electronic and UV applications
β Scribed by Mohamed Henini
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 521 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0961-1290
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β¦ Synopsis
Tremendous progress has been made in recent years in the growth, doping and processing technologies of the wide bandgap semiconductors. The principal driving force behind this activity is the potential use of, for example, the Ill-V nitrides in high-power, high-temperature, high-frequency electronic and optical devices resistant to radiation damage. This article reports the current state of the art for producing some selected devices from the Ill-V nitrides.
π SIMILAR VOLUMES
III-V nitride semiconductors are useful for LEDs with colors ranging from ultraviolet, blue to green. The luminescence of these LEDs shows a high luminosity and a high purity of color, and, therefore, many applications have been realized using these LEDs.
Phonons in III-V nitrides are examined experimentally for dimensionally conΓΏned systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system