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MOCVD growth of group III nitrides for high power, high frequency applications

✍ Scribed by M.-A. di Forte Poisson; M. Magis; M. Tordjman; N. Sarazin; J. di Persio

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
371 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract Chemical‐mechanical polishing (CMP) allows the planarization of wafers with thin layer at its surface. Subject of this investigation was to apply CMP for planarizing silicon nitride (Si~3~N~4~) passivation layer in high power III‐V laser devices, which remained in the structure as the i