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Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications

✍ Scribed by D.A.J. Moran; D.A. MacLaren; S. Porro; H. McLelland; P. John; J.I.B. Wilson


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
466 KB
Volume
88
Category
Article
ISSN
0167-9317

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