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[IEEE Semiconducting and Semi-Insulating Materials Conference - Toulouse, France (29 April-3 May 1996)] Proceedings of Semiconducting and Semi-Insulating Materials Conference - Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth

✍ Scribed by Hagi, Y.; Kawarabayashi, S.; Inoue, T.; Nakai, R.; Kohno, J.; Kawase, T.; Tatsumi, M.

Book ID: 126652675
Publisher: IEEE
Year: 1996
Weight: 410 KB
Category: Article
ISBN-13: 9780780331792
DOI: 10.1109/SIM.1996.571099

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