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[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance

โœ Scribed by Ghannam, M.Y.; Al Omar, A.S.; Flamand, G.; Posthuma, N.; Poortmans, J.; Mertens, R.P.


Book ID
120213211
Publisher
IEEE
Year
2004
Tongue
English
Weight
233 KB
Category
Article
ISBN-13
9780780384781

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