𝔖 Bobbio Scriptorium

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[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go?

✍ Scribed by Frank, ; Laux, ; Fischetti,

Book ID: 121264741
Publisher: IEEE
Year: 1992
Weight: 354 KB
Category: Article
ISBN-13: 9780780308176
DOI: 10.1109/IEDM.1992.307422

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