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[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Variability analysis of TiN FinFET SRAM cell performance and its compensation using Vth-controllable independent double-gate FinFET

✍ Scribed by Endo, Kazuhiko; O'uchi, Shin-ichi; Ishikawa, Yuki; Liu, Yongxun; Matsukawa, Takashi; Sakamoto, Kunihiro; Tsukada, Junichi; Yamauchi, Hiromi; Masahara, Meishoku

Book ID: 121183485
Publisher: IEEE
Year: 2010
Weight: 990 KB
Category: Article
ISBN: 1424450632
DOI: 10.1109/VTSA.2010.5488919

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