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[IEEE Proceedings of 1994 IEEE International Reliability Physics Symposium - San Jose, CA, USA (1994.04.11-1994.04.14)] Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94 - Effect of plasma-induced charging damage on n-channel and p-channel MOSFET hot carrier reliability

✍ Scribed by Mistry, R.R.; Fishbein, B.J.; Doyle, B.S.

Book ID: 126717229
Publisher: IEEE
Year: 1994
Weight: 570 KB
Category: Article
ISBN-13: 9780780313576
DOI: 10.1109/RELPHY.1994.307859

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