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[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V

✍ Scribed by Ohguro, T.; Saito, M.; Morifuji, E.; Murakami, K.; Matsuzaki, K.; Yoshitomi, T.; Morimoto, T.; Momose, H.S.; Katsumata, Y.; Iwai, H.

Book ID: 123607349
Publisher: IEEE
Year: 1996
Weight: 325 KB
Category: Article
ISBN-13: 9780780333932
DOI: 10.1109/IEDM.1996.553127

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