[IEEE International Electron Devices Mee
✦ LIBER ✦
[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Experimental study of carrier velocity overshoot in sub-0.1 μm devices-physical limitation of MOS structures
✍ Scribed by Mizuno, T.; Ohba, R.
- Book ID
- 120589189
- Publisher
- IEEE
- Year
- 1996
- Weight
- 395 KB
- Category
- Article
- ISBN-13
- 9780780333932
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