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[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

✍ Scribed by Kang, L.; Onishi, K.; Jeon, Y.; Byoung Hun Lee, ; Kang, C.; Wen-Jie Qi, ; Nieh, R.; Gopalan, S.; Choi, R.; Lee, J.C.

Book ID: 125886961
Publisher: IEEE
Year: 2000
Weight: 360 KB
Edition: 2000
Category: Article
ISBN-13: 9780780364387
DOI: 10.1109/IEDM.2000.904253

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