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[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - 30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays

✍ Scribed by Chau, R.; Kavalieros, J.; Roberds, B.; Schenker, R.; Lionberger, D.; Barlage, D.; Doyle, B.; Arghavani, R.; Murthy, A.; Dewey, G.

Book ID: 124085968
Publisher: IEEE
Year: 2000
Weight: 437 KB
Edition: 2000
Category: Article
ISBN-13: 9780780364387
DOI: 10.1109/IEDM.2000.904255

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