𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation

✍ Scribed by Wong, H.-S.P.; Frank, D.J.; Solomon, P.M.

Book ID: 121002646
Publisher: IEEE
Year: 1998
Weight: 420 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746385

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - 25 nm CMOS design considerations

✍ Taur, Y.; Wann, C.H.; Frank, D.J. 📂 Article 📅 1998 🏛 IEEE ⚖ 398 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

✍ Chatterjee, A.; Chapman, R.A.; Joyner, K.; Otobe, M.; Hattangady, S.; Bevan, M.; 📂 Article 📅 1998 🏛 IEEE ⚖ 622 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

✍ Suemitsu, T.; Ishii, T.; Yokoyama, H.; Umeda, Y.; Enoki, T.; Ishii, Y.; Tamamura 📂 Article 📅 1998 🏛 IEEE ⚖ 469 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Physics-based RF noise modeling of submicron MOSFETs

✍ Donati, S.; Alam, M.A.; Krisch, K.S.; Martin, S.; Pinto, M.R.; Vuong, H.H.; Bona 📂 Article 📅 1998 🏛 IEEE ⚖ 439 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Novel high-Q bondwire inductor for MMIC

✍ Yong-Goo Lee, ; Sang-Ki Yun, ; Hai-Young Lee, 📂 Article 📅 1998 🏛 IEEE ⚖ 609 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Explanation of stress-induced damage in thin oxides

✍ Bude, D.J.; Weir, B.E.; Silverman, P.J. 📂 Article 📅 1998 🏛 IEEE ⚖ 360 KB