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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Physics-based RF noise modeling of submicron MOSFETs

✍ Scribed by Donati, S.; Alam, M.A.; Krisch, K.S.; Martin, S.; Pinto, M.R.; Vuong, H.H.; Bonani, F.; Ghione, G.

Book ID: 125834826
Publisher: IEEE
Year: 1998
Weight: 439 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746282

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