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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

✍ Scribed by Suemitsu, T.; Ishii, T.; Yokoyama, H.; Umeda, Y.; Enoki, T.; Ishii, Y.; Tamamura, T.

Book ID: 121296844
Publisher: IEEE
Year: 1998
Weight: 469 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746339

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