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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

✍ Scribed by Chatterjee, A.; Chapman, R.A.; Joyner, K.; Otobe, M.; Hattangady, S.; Bevan, M.; Brown, G.A.; Yang, H.; He, Q.; Rogers, D.; Fang, S.J.; Kraft, R.; Rotondaro, A.L.P.; Terry, M.; Brennan, K.; Aur, S.-W.; Hu, J.C.; Tsai, H.-L.; Jones, P.; Wilk, G.; Aoki, M.; Rodder, M.; Chen, I.-C.

Book ID: 121298927
Publisher: IEEE
Year: 1998
Weight: 622 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746471

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