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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

✍ Scribed by MeiKei Ieong, ; Solomon, P.M.; Laux, S.E.; Wong, H.-S.P.; Chidambarrao, D.

Book ID: 118182449
Publisher: IEEE
Year: 1998
Weight: 304 KB
Volume: 0
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/iedm.1998.746461

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