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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Characterization of arsenic dose loss at the Si/SiO/sub 2/ interface using high resolution X-ray photoelectron spectrometry

✍ Scribed by Kasnavi, R.; Pianetta, P.; Yun Sun, ; Renee Mo, ; Griffin, P.B.; Plummer, J.D.

Book ID: 111871552
Publisher: IEEE
Year: 1998
Weight: 344 KB
Volume: 0
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/iedm.1998.746458

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