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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Importance of Si-N atomic configuration at the Si/oxynitride interfaces on the performance of scaled MOSFETs

✍ Scribed by Takayanagi-Takagi, M.; Toyoshima, Y.

Book ID: 111672060
Publisher: IEEE
Year: 1998
Weight: 531 KB
Volume: 0
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/iedm.1998.746424

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