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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

✍ Scribed by Omura, Y.; Nakashima, S.; Izumi, K.; Ishii, T.

Book ID: 121465985
Publisher: IEEE
Year: 1991
Weight: 300 KB
Category: Article
ISBN-13: 9780780302433
DOI: 10.1109/IEDM.1991.235332

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