𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al/sub 2/O/sub 3/ (0001) by plasma-assisted molecular beam epitaxy

✍ Scribed by Kostopoulos, A.; Mikroulis, S.; Dimakis, E.; Tsagaraki, K.; Constantinidis, G.; Georgakilas, A.

Book ID: 121082498
Publisher: IEEE
Year: 2000
Weight: 282 KB
Category: Article
ISBN-13: 9780780359390
DOI: 10.1109/ASDAM.2000.889519

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - AlGaN/GaN heterostructures for UV photodetector applications

✍ Boratynski, B.; Paszkiewicz, R.; Paszkiewicz, B.; Jankowski, B.; Tlaczala, M. 📂 Article 📅 2000 🏛 IEEE ⚖ 265 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Design and technology of InGaP/GaAs DHBTs

✍ Rezazadeh, A.A.; Sotoodeh, M. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 419 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Photoelectric properties of Schottky barriers based on porous silicon

✍ Blynski, V.I.; Lazarouk, S.K.; Malyshev, S.A.; Matskevich, T.P. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 265 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - A Raman study of NiO/sub x/ films for gas sensors applications

✍ Srnanek, R.; Hotovy, I.; Malcher, V.; Vincze, A.; McPhail, D.; Littlewood, S. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 193 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Nature of the red photoluminescence in porous silicon

✍ Torchynska, T.V.; Bacarril-Espinosa, G.; Ita-Torre, A.; Palacios Gomez, J.; Kors 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 226 KB

[IEEE International Conference on Advanc

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - On the measurement of high resistance semiconductors by the van der Pauw method

✍ Morvic, M. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 255 KB