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[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Temperature dependence of terahertz emission from silicon devices doped with Boron

✍ Scribed by Troeger, R.T.; Adam, T.N.; Ray, S.K.; Lv, P.-C.; Kim, S.; Kolodzey, J.

Book ID: 126660764
Publisher: IEEE
Year: 2004
Weight: 588 KB
Category: Article
ISBN-13: 9789812561961
DOI: 10.1109/LECHPD.2004.1549670

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