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[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - A new field-plated GaN HEMT structure with improved power and noise performance

✍ Scribed by Hongtao Xu, ; Sanabria, C.; Chini, A.; Yun Wei, ; Heikman, S.; Keller, S.; Mishra, U.K.; York, R.A.

Book ID: 121218949
Publisher: IEEE
Year: 2004
Weight: 804 KB
Category: Article
ISBN-13: 9789812561961
DOI: 10.1109/LECHPD.2004.1549692

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