𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Noise characteristics of field-plated GaN HEMTs

✍ Scribed by Wu, Y.-F.; Moore, M.; Wisleder, T.; Chavarkar, P.m.; Parikh, P.

Book ID: 121487805
Publisher: IEEE
Year: 2004
Weight: 280 KB
Category: Article
ISBN-13: 9789812561961
DOI: 10.1109/LECHPD.2004.1549693

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - A new field-plated GaN HEMT structure with improved power and noise performance

✍ Hongtao Xu, ; Sanabria, C.; Chini, A.; Yun Wei, ; Heikman, S.; Keller, S.; Mishr 📂 Article 📅 2004 🏛 IEEE ⚖ 804 KB

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Spice model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier

✍ Islam, S.S.; Anwar, A.F.M. 📂 Article 📅 2004 🏛 IEEE ⚖ 713 KB

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Temperature dependence of terahertz emission from silicon devices doped with Boron

✍ Troeger, R.T.; Adam, T.N.; Ray, S.K.; Lv, P.-C.; Kim, S.; Kolodzey, J. 📂 Article 📅 2004 🏛 IEEE ⚖ 588 KB

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Analysis of operational transconductance amplifier for application in GHz frequency range

✍ Ghori, A.; Ghosh, P. 📂 Article 📅 2004 🏛 IEEE ⚖ 398 KB

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Analytical model for non-self aligned buried P-layer SiC MESFET

✍ Gupta, R.S.; Aggarwal, S.K.; Gupta, R.; Gupta, M.; Haldar, S. 📂 Article 📅 2004 🏛 IEEE ⚖ 518 KB

[IEEE IEEE Lester Eastman Conference on

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - 2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

✍ Sei-Hyung Ryu, ; Krishnaswami, S.; Das, M.; Richmond, J.; Agarwal, A.; Palmour, 📂 Article 📅 2004 🏛 IEEE ⚖ 754 KB