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[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Analytical model for non-self aligned buried P-layer SiC MESFET

✍ Scribed by Gupta, R.S.; Aggarwal, S.K.; Gupta, R.; Gupta, M.; Haldar, S.

Book ID: 124150734
Publisher: IEEE
Year: 2004
Weight: 518 KB
Category: Article
ISBN-13: 9789812561961
DOI: 10.1109/LECHPD.2004.1549706

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