✦ LIBER ✦

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

✍ Scribed by Chi On Chui, ; Hyoungsub Kim, ; Chi, D.; Triplett, B.B.; McIntyre, P.C.; Saraswat, K.C.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE IEEE International Electron Device

✍ Iwai, H.; Ohmi, S.; Akama, S.; Ohshima, C.; Kikuchi, A.; Kashiwagi, I.; Taguchi, 📂 Article 📅 2002 🏛 IEEE ⚖ 239 KB

[IEEE IEEE International Electron Device

✍ Kedzierski, J.; Nowak, E.; Kanarsky, T.; Zhang, Y.; Boyd, D.; Carruthers, R.; Ca 📂 Article 📅 2002 🏛 IEEE ⚖ 312 KB

[IEEE IEEE International Electron Device

✍ Bin Yu, ; Leland Chang, ; Ahmed, S.; Haihong Wang, ; Bell, S.; Chih-Yuh Yang, ; 📂 Article 📅 2002 🏛 IEEE ⚖ 277 KB

[IEEE IEEE International Electron Device

✍ Fu-Liang Yang, ; Hao-Yu Chen, ; Fang-Cheng Chen, ; Cheng-Chuan Huang, ; Chang-Yu 📂 Article 📅 2002 🏛 IEEE ⚖ 327 KB

[IEEE IEEE International Electron Device

✍ Nowak, E.J.; Rainey, B.A.; Fried, D.M.; Kedzierski, J.; Ieong, M.; Leipold, W.; 📂 Article 📅 2002 🏛 IEEE ⚖ 313 KB

[IEEE IEEE International Electron Device

✍ Wentai Liu, 📂 Article 📅 2002 🏛 IEEE ⚖ 366 KB