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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - An investigation of the damage mechanisms in impact ionization-induced "mixed-mode" reliability stressing of scaled SiGe HBTs

✍ Scribed by Chendong Zhu, ; Qingqing Liang, ; Al-Huq, R.; Cressler, J.D.; Joseph, A.; Johansen, J.; Tianbing Chen, ; Guofu Niu, ; Freeman, G.; Jae-Sung Rieh, ; Ahlgren, D.

Book ID: 126705252
Publisher: IEEE
Year: 2003
Weight: 266 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269209

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