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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - CVD-cobalt for the next generation of source/drain salicidation and contact silicidation in novel MOS device structures with complex shape

✍ Scribed by Kang, S.B.; Kim, H.S.; Moon, K.J.; Sohn, W.H.; Choi, G.H.; Kim, S.H.; Bae, N.J.; Chung, U.I.; Moon, J.T.

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