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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Scalability of strained silicon CMOSFET and high drive current enhancement in the 40 nm gate length technology

✍ Scribed by Sanuki, T.; Oishi, A.; Morimasa, Y.; Aota, S.; Kinoshita, T.; Hasumi, R.; Takegawa, Y.; Isobe, K.; Yoshimura, H.; Iwai, M.; Sunouchi, K.; Noguchi, T.

Book ID: 120176978
Publisher: IEEE
Year: 2003
Weight: 235 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269167

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