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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technology

✍ Scribed by Luther-King, N.; Sweet, M.; Sankara Narayanan, E.M.

No coin nor oath required. For personal study only.

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