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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

✍ Scribed by Rahimo, M.; Kopta, A.; Schlapbach, U.; Vobecky, J.; Schnell, R.; Klaka, S.

No coin nor oath required. For personal study only.

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