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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - A field-plated drift-length scalable EDPMOS device structure

✍ Scribed by Letavic, T.; Sharma, S.; Cook, R.; Brock, R.; Gondal, A.; Mandhare, C.; van Noort, W.

No coin nor oath required. For personal study only.

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