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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process

✍ Scribed by Kadow, Christoph; Decker, Stefan; Dibra, Donald; Krischke, Norbert; Lanzerstorfer, Sven; Maier, Hubert; Meyer, Thorsten; Vannucci, Nicola; Zink, Robert

Book ID: 125492024
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 399 KB
Category: Article
ISBN: 1424435250
DOI: 10.1109/ISPSD.2009.5158042

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