𝔖 Bobbio Scriptorium

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[IEEE High Density Design Packaging and Microsystem Integration, 2007 International Symposium on - (2007.06.26-2007.06.28)] High Density Design Packaging and Microsystem Integration, 2007 International Symposium on - A Method to Model MOSFET's Second Breakdown Action for Circuit-Level ESD Simulation

✍ Scribed by Cui, Qiang; Han, Yan; Liou, Juin J.; Dong, Shurong; Si, Ruijun; Peng, Cheng

Book ID: 125453613
Publisher: IEEE
Year: 2007
Weight: 275 KB
Category: Article
ISBN-13: 9781424412532
DOI: 10.1109/hdp.2007.4283600

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