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[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62nm in La-silicate MOSFET

✍ Scribed by Kawanago, T.; Lee, Y.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Book ID: 126738349
Publisher: IEEE
Year: 2011
Weight: 414 KB
Category: Article
ISBN: 1457707071
DOI: 10.1109/ESSDERC.2011.6044233

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