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[IEEE Comput. Soc 2001 IEEE International Workshop on Memory Technology, Design and Testing - San Jose, CA, USA (6-7 Aug. 2001)] Proceedings 2001 IEEE International Workshop on Memory Technology, Design and Testing - Realistic fault models and test procedure for multi-port SRAMs

โœ Scribed by Hamdioui, S.; van de Goor, A.J.; Eastwick, D.; Rodgers, M.


Book ID
120603714
Publisher
IEEE Comput. Soc
Year
2001
Tongue
English
Weight
745 KB
Category
Article
ISBN-13
9780769512426

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โœฆ Synopsis


The 14 papers in this collection from the August 2001 workshop are divided into five sessions on semiconductor memory design, BIST, redundancy and error control, fault models and multi-port SRAM testing, and verification and testing. Some of the topics are evaluation of redundancy analysis algorithms, a parallel approach for testing multi-port static random access memories, a low output resistance charge pump for flash memory programming, BIST-based bitfail mapping of an embedded DRAM, and an orthogonal transpose-RAM cell array architecture with an alternate bit-line to bit-line contact scheme. No subject index.

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