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[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Relationship between profile of stress generated interface traps and degradation of submicron LDD MOSFET'S

✍ Scribed by Okhonin, S.; Hessler, T.; Dutoit, M.

Book ID: 120035216
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 284 KB
Category: Article
ISBN-13: 9780780333697
DOI: 10.1109/ESREF.1996.888188

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